Semiconducting SWCNT Photo Detector for High Speed Switching Through Single Halo Doping
نویسندگان
چکیده
The method opted for accuracy, and no existing studies are based on this method. A design characteristic survey of a new small band gap semiconducting Single Wall Carbon Nano Tube (SWCNT) Field Effect Transistor as photodetector is carried out. In the proposed device, better performance achieved by increasing diameter introducing single halo (SH) doping in channel length CNTFET device. This paper study analysis (CNTFET) using self-consistent Poisson Green function 2D Green’s various optical intensities wavelength simulate photodetector. simulation drain current, transconductance, sub-threshold swing, cut-off frequency, gain, directivity, quantum efficiency under dark illuminated conditions. These results show that frequency increases while there an increase diameter. SH-CNTFET provides terms higher gain directivity than conventional (C-CNTFET). device will be helpful optoelectronic integrated circuits (OEIC) receivers due to its superior performance.
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ژورنال
عنوان ژورنال: Computer systems science and engineering
سال: 2023
ISSN: ['0267-6192']
DOI: https://doi.org/10.32604/csse.2023.034681